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TPH3206PS

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TPH3206PS

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 2.6V @ 500µA

Operating Temperature : -55°C ~ 175°C (TJ)

Package / Case : TO-220-3

Gate Charge (Qg) (Max) @ Vgs : 9.3 nC @ 4.5 V

Rds On (Max) @ Id, Vgs : 180mOhm @ 11A, 8V

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 10V

Package : Tube

Drain to Source Voltage (Vdss) : 600 V

Vgs (Max) : ±18V

Product Status : Not For New Designs

Input Capacitance (Ciss) (Max) @ Vds : 760 pF @ 480 V

Mounting Type : Through Hole

Series : -

Supplier Device Package : TO-220AB

Mfr : Transphorm

Current - Continuous Drain (Id) @ 25°C : 17A (Tc)

Power Dissipation (Max) : 96W (Tc)

Technology : GaNFET (Gallium Nitride)

Base Product Number : TPH3206

Description : GANFET N-CH 600V 17A TO220AB

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N-Channel 600 V 17A (Tc) 96W (Tc) Through Hole TO-220AB

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