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ISS55EP06LMXTSA1

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ISS55EP06LMXTSA1

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 2V @ 11µA

Operating Temperature : -55°C ~ 150°C (TJ)

Package / Case : TO-236-3, SC-59, SOT-23-3

Gate Charge (Qg) (Max) @ Vgs : 0.59 nC @ 10 V

Rds On (Max) @ Id, Vgs : 5.5Ohm @ 180mA, 10V

FET Type : P-Channel

Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V

Package : Tape & Reel (TR) Cut Tape (CT) Digi-Reel®

Drain to Source Voltage (Vdss) : 60 V

Vgs (Max) : ±20V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 18 pF @ 30 V

Mounting Type : Surface Mount

Series : OptiMOS™

Supplier Device Package : PG-SOT23-3-5

Mfr : Infineon Technologies

Current - Continuous Drain (Id) @ 25°C : 180mA (Ta)

Power Dissipation (Max) : 400mW (Ta)

Technology : MOSFET (Metal Oxide)

Base Product Number : ISS55EP06

Description : MOSFET P-CH 60V 180MA SOT23-3

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P-Channel 60 V 180mA (Ta) 400mW (Ta) Surface Mount PG-SOT23-3-5

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