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Transistor Polarity : N-Channel
Technology : Si
Id - Continuous Drain Current : 110 A
Mounting Style : Through Hole
Minimum Operating Temperature : - 55 C
Package / Case : TO-220-3
Channel Mode : Enhancement
Vds - Drain-Source Breakdown Voltage : 55 V
Packaging : Tube
Product Category : MOSFET
Rds On - Drain-Source Resistance : 6.5 mOhms
Number of Channels : 1 Channel
Vgs - Gate-Source Voltage : 20 V
Qg - Gate Charge : 76 nC
Manufacturer : IR / Infineon
Description : MOSFET AUTO 55V 1 N-CH HEXFET 6.5mOhms
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