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IPD110N12N3GBUMA1

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IPD110N12N3GBUMA1

Product Category : MOSFET

Vgs (Max) : ±20V

Current - Continuous Drain (Id) @ 25°C : 75A (Tc)

FET Type : N-Channel

Mounting Type : Surface Mount

Gate Charge (Qg) (Max) @ Vgs : 65nC @ 10V

Manufacturer : Infineon Technologies

Minimum Quantity : 2500

Drive Voltage (Max Rds On, Min Rds On) : 10V

Operating Temperature : -55°C ~ 175°C (TJ)

FET Feature : -

Series : OptiMOS™

Input Capacitance (Ciss) (Max) @ Vds : 4310pF @ 60V

Supplier Device Package : PG-TO252-3

Part Status : Obsolete

Packaging : Tape & Reel (TR)

Rds On (Max) @ Id, Vgs : 11 mOhm @ 75A, 10V

Power Dissipation (Max) : 136W (Tc)

Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63

Technology : MOSFET (Metal Oxide)

Vgs(th) (Max) @ Id : 4V @ 83µA

Drain to Source Voltage (Vdss) : 120V

Description : MOSFET N-CH 120V 75A TO252-3

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The IPD110N12N3GBUMA1,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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